Plasma etching and deposition of thin films are critical processes in the manufacture of advanced microelectronic devices. Introduction to plasma etching university of texas at austin. Simulaiton of the dual frequency capacitively coupled ar. In this paper, a numerical simulation model was developed to simulate the plasma in a dual frequency capacitively coupled plasma reactor based on a twodimensional, selfconsistent fluid model. Thus, they are categorized as edischarge in comparison with hdischarge inductively coupled discharge. A nonlinear global model of single frequency capacitively coupled. For instance, the internal electrodes in ccps introduced unnecessary impurities into the plasma. Electric field filamentation and higher harmonic generation in a very. Inductively coupled plasma an overview sciencedirect. A method for depositing a film by plasmaenhanced subatmosphericpressure atomic layer deposition subatmospheric peald is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric peald includes. Pdf on nov 5, 2018, yasunori ohtsu and others published physics of high density radio frequency capacitively coupled plasma with various electrodes.
This of course is a big challenge and gives the motivation to utilize a dual or multi frequency capacitively coupled plasmas. Nano express open access voltage distribution over. With a high fluorescence intensity, the cdots obtained from the o2ccp radiation of a 1ethyl3methylimidazolium dicyanamide ionic liquid solution of citric acid were characterized with an. Plasma parameters are derived from kinetic theory including density, potential, sheath capacitance, power balance etc. Inductively coupled discharge plasma pie scientific. A laboratoryscale capacitively coupled radio frequency rf plasma pyrolysis reactor working in reduced pressure has been developed. Plasma parameters and the subsonic flow from a capacitively coupled, cylindrical plasma source of the njord helicon device are investigated by means of a mach probe and a retarding field energy analyzer rfea. Control of ion energy and angular distributions in dual.
Parallel plate capacitively coupled plasma ccp sources are widely used for dry etching and deposition of materials for microelectronics fabrication. Comparison in plasma parameters was also made between a capacitively coupl ed plasma ccp and an inductively coupled plasma icp. Capacitively coupled discharge works similarly as dc glow discharge. Inductively coupled plasma an overview sciencedirect topics. Among these applications, capacitively coupled plasma ccp. Capacitivelycoupled microwave plasma how is capacitively. However, when the electrodes become large relative to the wavelength of the electromagnetic wave used to generate the plasma, the standing wave effect will become significant, deteriorating the uniformity of. Chapter 3 inductively coupled plasmaatomic emission.
Simulation of main plasma parameters of a cylindrical. These processes commonly utilize a capacitively coupled plasma ccp, in which the plasma is initiated and sustained by an oscillating electric field in a region between two or more electrodes. Pdf physics of highdensity radio frequency capacitively. Kushnerb department of electrical engineering and computer science, university of michigan, 1 beal ave. Numerical calculations of some plasma parameters of the. A typical ccp system is driven by a single radiofrequency rf power supply. Electromagnetic effects in capacitively coupled plasmas. They both rely on the electric field created by voltage applied on the electrodes to accelerate freemoving electrons to knock out bonded electrons in neutrals. Show full abstract research, we present the simulation results of a pulsed twofrequency capacitively coupled plasma 2fccp1,2 based on relaxation continuum rct. In particular, for large area plasma enhanced chemical vapour deposition pecvd, the parallel. Computational study of capacitively coupled highpressure. Proceedings of the asme 7th biennial conference on engineering systems design and analysis.
The model used in this investigation is a twodimensional 2d plasma hydrodynamics simulation utilizing an unstructured mesh to resolve the small dimensions of the waferfocus ring gap. Capacitively coupled plasmas microwave plasmas inductively coupled plasma streamer discharge ion energy and angular distributions key features 1d 2d 3d nonequilibrium plasma modeling fully parallelized simulations supports hybrid structuredunstructured meshes robust solvers for accelerated solutions on complex meshes. Kinetic simulation of capacitively coupled plasmas driven. Dual frequency capacitively coupled plasmas 2fccps. Concomitantly, the radio frequency rf voltage needed to deliver a given input power to the plasma, and hence the plasma potential, decreases with frequency.
Discharge characteristics of an atmosphericpressure. Numerical calculations by using a selfconsistent model of the collisional sheath for the capacitively coupled rf discharge are our target. Detailed investigations of the sheath dynamics and elementary. Figure 31 shows the common components of an icpaes system from the late 1980s to the 1990s. Following requirements of the plasma processing industry for increasing throughput, capacitively coupled plasma reactors with large area. Introduction capacitively coupled plasma ccp reactors are widely used in plasma processing. Food and food products can be prepared for icp analysis by either wet oxidation or dry ashing and samples with a wide range of. A method for depositing a film by plasma enhanced subatmosphericpressure atomic layer deposition subatmospheric peald is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric peald includes. Consequences on etch profiles yiting zhanga and mark j.
The behavior of a single frequency capacitively coupled plasma ccp driven by. The operating principle of a capacitively coupled plasma is different when compared to the inductive case. Comparison of plasma parameters in ccp and icp processes. Radiofrequency plasma sources for semiconductor processing. Inductively coupled plasma icp excitation has revolutionized the field of emission spectroscopy, providing the analyst with a powerful multielement technique with good sensitivity for cadmium at 214. In this study, the transmission line modeling method is applied to calculate the voltage distribution over. The gas pressure in the reactor can be lower than atmosphere or it can be atmospheric description.
The electron ohmic heating power, the average stochastic power for a single sheath, the power dissipated in the sheath and the sheath thickness are calculated. In a ccp reactor, the plasma is sustained by applying a sinusoidal electrostatic potential across a small gap filled with a low pressure gas typically 1 torr and in this case, the gas is argon. Frequency of the power is usually in tens of khz to tens of mhz range. Lowpressure capacitively coupled plasmas are now widely used for plasma processing in the semiconductor technique. In this study, the transmission line modeling method is applied to calculate the voltage. Multispiral coil icp mscicp, which has the advantages of low inductance, high efficiency, and excellent uniformity, is discussed in detail. The power dissipated in the sheath is calculated and compared with the measured data. An inductively coupled plasma icp or transformer coupled plasma tcp is a type of plasma source in which the energy is supplied by electric currents which are produced by electromagnetic induction, that is, by timevarying magnetic fields. Characteristics of pulsed capacitively coupled plasma sources. Biomass gasification using capacitively coupled rf plasma. Characteristics of pulsed capacitively coupled plasma. Computational fluid dynamics cfd simulations of a radiofrequency. Capacitively coupled hydrogen plasmas sustained by.
A twodimensional 2d selfconsistent fluid simulation of dual frequency capacitively coupled radio discharges of helium plasma is presented. Kinetic simulation of capacitively coupled plasmas driven by. Plasma potential determination in rf capacitively coupled. In conventional single frequency capacitively coupled plasma 1fccp, the ion flux and the ion energy bombarding the substrate cant be controlled separately. For pecvd, capacitively coupled plasma ccp has the advantage of generating the largearea plasma necessary to process large substrates. Decreases in averaged v p and v dc with changing h decrease in the electron temperature v p was determined by measuring v rf with changing the electrode position by using a voltage divider circuit. A typical ccp system is driven by a single radiofrequency. Chapter 3 inductively coupled plasmaatomic emission spectrometry. The aim of our work is to provide estimates of the main discharge. For a commonly used cylindrical plasma chamber shown below, antenna is usually wrapped around the electrically insulating chamber wall. Principle setup of an asymmetric capacitively coupled rf discharge with. This model benchmarks the capacitively coupled plasma physics interface against many different codes.
A capacitively coupled plasma ccp is one of the most common types of industrial plasma sources. Capacitively coupled plasma discharge of ionic liquid. The results indicated that, at high pressure, the ohmic heating is usually the dominant heating mechanism in the discharge. Modeling of magnetically enhanced capacitively coupled. Check that your browser and pdf plugins are uptodate. Plasmas are ideal for producing reactive species radicals, ions for modifying surface properties to achieve desired mechanical or chemical functionality.
The argon plasma is generated in two capacitively coupled rf systems. A presence of plasma dramatically changes the modes supported by a capacitively coupled reactor. Voltage distribution over capacitively coupled plasma. It essentially consists of two metal electrodes separated by a small distance, placed in a reactor. The model solves the continuity equations for charged species and the electron energy balance equation, coupled with poissons equation by finite element method, using comsol multiphysics software. The underlying physics of a capacitively coupled plasma is rather complicated, even for rather simple geometric configurations and plasma chemistries. Experiments have been performed to examine the characteristics of this rf plasma reactor and the products of biomass gasification.
Inductively coupled plasma sources and applications. When capacitively coupled plasma ccp is used to generate largearea plasma, the standing wave effect becomes significant, which results in the hindering of the uniform plasma process such as in a plasma etcher or plasma chemical vapor deposition. Radiofrequency capacitively coupled plasmas in hydrogen. One method of improving the performance of ccp sources is applying a transverse static magnetic. Raja abstract the structure of a capacitively coupled highpressure glow hpg discharge in highpurity helium is investigated using a. The gas pressure in the reactor can be lower than atmosphere or it can be atmospheric. In general, low capacitance input transistors are preferable, and systems where the total capacitance at the input is dominated by the detector capacitance are more efficient than systems that are capacitively. Capacitively coupled discharge plasma pie scientific. Oxygen and nitrogen capacitively coupled plasma ccp was used to irradiate mixtures of aliphatic acids in high boiling point solvents to synthesize fluorescent carbon dots cdots. A plasma is a quasineutral gas of charged and neutral particles quasineutral means that overall the net charge of the plasma is approximately zero, because fluctuations in charge density in the plasma are small in magnitude and short in duration a plasma is created whenever gases are forced to conduct electric current.
An icpaes system can be divided up into two basic parts. Aug 05, 2015 35 axial view plasma looks down the central channel of the plasma, this provides the best sensitivity and lowest detection limits axial design o environmental, o chemical. A capacitively coupled rf plasma is investigated in the context of the heating mechanisms that. It was found that the electrode geometry, input power and reactor pressure were the key. Capacitivelycoupled microwave plasma listed as cmp. Modeling discharge and surface processes in capacitively. Modeling of magnetically enhanced capacitively coupled plasma. Capacitively coupled plasma how is capacitively coupled. Two of the most technologically and commercially important applications of plasmas are etchingdeposition for microelectronic fabrication and functionalization of polymers. Langmuir probe used in experimental and numerical investigations of the phaseshift effect in capacitively coupled plasma discharges the study radio frequency capacitively coupled plasma ccp discharges have many applications in the semiconductor industry, including surface treatment, film deposition and etching. Pdf homogeneous hydrogen plasma discharge driven by two sinusoidal current sources has been analyzed. Sep 28, 2019 capacitively not comparable physics, electronics in relation to or in terms of capacitance 2005, helmuth spieler, semiconductor detector systems.
Discharge characteristics of an atmosphericpressure capacitively coupled radiofrequency argon plasmas shouzhe lia. Thus, they are categorized as edischarge in comparison with hdischarge. A read is counted each time someone views a publication summary such as the title, abstract, and list of authors, clicks on a figure, or views or downloads the fulltext. Therefore, these modes in a capacitively coupled discharge consist of surface waves. Capacitively and inductively coupled plasma for mems applications. A selfconsistent model of the collisional sheath of the capacitively coupled rf discharge at high gas pressure is used. Capacitively coupled plasmas capacitively coupled plasmas have been used since 1975 for anisotropic reactive ion etching rie. With a high fluorescence intensity, the cdots obtained from the o2ccp radiation of a 1ethyl3methylimidazolium dicyanamide ionic liquid solution of citric acid were characterized with an average diameter of 8. Capacitively coupled discharges were widely used in the microelectronics industry for the production of inrf tegrated circuits specially processes such as etching and coating 15.
Applications to thin film processing technologies and the future prospects of icp are also described. The large area parallel plate capacitively coupled reactors used for pecvd are almost. Application note lp10 langmuir probe used in experimental and. Capacitively and inductively coupled plasma for mems. Nonlinear lumped model circuit of capacitively coupled.
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